发明名称 HIGH FREQUENCY SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To correct an impedance converting circuit of a high frequency without cutting, etc., a pattern using laser light, by impressing a DC voltage of a reverse direction to a diode, and controlling a depletion layer width of a junction of the diode. CONSTITUTION:A second electrode 6 of a diode forms a Schottky diode between the electrode and a well 5. From the second electrode 6 of the diode, a DC voltage impressing electrode 7 is led out, and also, connected to a first metal of a laminated capacitor. The laminated capacitor is constituted of the first metal 9, an insulated film 8 and a second metal 10, and operated so as to cut a DC current. The second metal 10 is connected to a ground by using a bonding wire 11 and grounded like a high frequency, and the DC voltage impressing electrode 7 is connected to a DC voltage terminal 12 through the bonding wire 11, and impresses a voltage. From the DC voltage terminal 12, a reverse voltage con be impressed to the diode, therefore, a depletion layer width of the diode can be made variable, and a capacity value can be changed equivalently.</p>
申请公布号 JPS6350106(A) 申请公布日期 1988.03.03
申请号 JP19860193233 申请日期 1986.08.19
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 ISHIKAWA OSAMU
分类号 H01L23/12;H01L21/338;H01L29/80;H01L29/812;H01P5/04;H01P5/08;H03F3/60 主分类号 H01L23/12
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