| 摘要 |
PURPOSE:To obtain a photoconductive material having superior photoconductive characteristics with respect to lights in wavelength region from the visible light to near IR rays by using photoconductive material composed essentially of CdS. Sb2S3.Sb2Se3 type compd. CONSTITUTION:The intended photoconductive material is composed essentially of CdS.Sb2S3.Sb2Se3 type compds., and this type compd. is prepared by introducing gaseous H2S and H2Se into an aq. acidic soln. of potassium antimonyl tartarate, antimony trichloride, and cadmium salt. As a result, superior photoconductive characteristics can be obtained to lights in the visible and near IR region, especially in 400-1,000nm wavelength region. |
