| 摘要 |
<p>A reactor, suitable for CVD processes presents a high aspect ratio to reactant gases. Substrates to receive CVD deposits are mounted on oppositely disposed susceptors (24L, R), in a vertical chimney-type reactor (10, 16), and means (130, 134) are provided to rotate the susceptors (24L, R) about an axis perpendicular to gas flow through the reactor (10, 16). A loading mechanism (20) is provided for loading and unloading the susceptors (24) through a gate valve (40) atop the reactor (10, 16) and a diffuser (47) below the reaction zone (Rin) in reactor (10, 16) controls gas flow into the reaction zone (Rin) such that the flow is initially greater at the outer extremities of the zone (Rin) than at the inner core thereof.</p> |
