| 摘要 |
PURPOSE:To prevent wire breakdown at a step part, defects due to electromigration accompanied by the increase in current density and short circuits between layers due to the yield of hillocks, by a laminated structure, in which metal layers are provided between Al layers including C. CONSTITUTION:The constitution of this device bas a laminated structure, in which, e.g., metal layers 5 are provided between Al layers 4. The concentration of C in the Al layer 4 is relatively high. The concentration of the C in the metal layer 5 is relatively low. In addition, an SiO2 oxide film 7, a contact hole 7a and a diffused layer 10 are provided in an Si substrate 6. A metal layer 9, whose concentration of C is relatively low, is provided between Al layers 8, whose concentration of the C is relatively high. Such a laminated structure is possible. The lower Al layer is in contact with the Si substrate 6. Si is introduced in the Al layers 8 so as to prevent the diffusion of Si in the substrate into Al. |
