| 摘要 |
PURPOSE:To obtain the titled body having stabilized characteristics, without increasing dark decay of charge potential even at a high temperature by using a non-crystalline selenium alloy which is doped with tin (Sn) as a carrier transfer layer. CONSTITUTION:The carrier transfer layer 2 is formed by vacuum-depositing the selenium alloy doped with Sn on a conductive substrate 1. Thus, when the selenium alloy is doped with Sn, fractionation of the component elements of the alloy is controlled in the deposition, thereby making a composition ratio of the component elements uniform in the direction of film thickness of the formed carrier transfer layer 2. As a result, the dark decay of the charge potential, even at the high temperature, does not increase, and the stable selenium type titled body having less tendency for generating variance of characteristics is obtd. |
