| 摘要 |
PURPOSE:To reduce the OFF current of a thin film transistor which uses a CdSe polycrystal without considerably complicating an element structure and to decrease the irregularity of each OFF current element by covering the surface of a CdSe polycrystalline thin film opposite to a gate insulating film with a P-type semiconductor. CONSTITUTION:A gate electrode 2 is disposed through a gate insulating film 3 on one side surface of a CdSe polycrystalline thin film 4, source and drain electrodes 5, 6 are disposed at predetermined parts of the film 4, and the other side surface 8 of the film 4 is covered with a P-type semiconductor 19. For example, aluminum is deposited on a glass substrate 1 to form the gate electrode 2, alumina is deposited thereon by a sputtering method to form the film 3. Then, the film 4 is deposited, an unnecessary part is removed by a lifting off method, aluminum is then deposited to form the electrodes 5, 6. Further, after a resist pattern is formed on the upper surface, the P-type CdTe polycrystalline thin film 19 is deposited, and the unnecessary part is removed by a lifting off method. |
