| 摘要 |
PURPOSE:To obtain a device which does not have the deterioration at the contact parts by a method wherein impurity regions are formed in the surface of a semiconductor substrate and an insulating film is formed on this substrate in such a manner that some parts of the impurity regions are exposed and a polycrystalline silicon layer is deposited on the whole surface and the same type of impurity is diffused in this silicon layer and at the same time the impurity is also diffused in the regions and then a metal wiring is formed on the whole surface. CONSTITUTION:An oxide film 2, which has apertures, is formed on a P type Si substrate 1 and an impurity is diffused in the apertures to form an N type source region 3 and an N type drain region 4. These regions are covered with a gate oxide film 5 which has a thick field oxide film at its circumference. Contact holes 6 and 7 are drilled in the film 5 and a polycrystalline silicon layer 8 is deposited on the whole surface including these holes. As impurity is diffused to increase the coductivity of the layer 8 and at the same time the same impurity is made penetrate the N type regions 3 and 4 to produce N<+> type regions 9 and 10 in those regions 3 and 4. Then an Al 11, which has contact with the regions 9 and 10, is formed. With this constitution, sucking out of the Si in the single crystal layer is blocked by the polycrystalline layer 8. |
