| 摘要 |
PURPOSE:To enable to perform self-alignment without the use of lifting off method to improve a pattern shape matching accuracy and to avoid the malfunction of an operation thereby to improve a yield by composing a gate electrode of a transparent conductive film. CONSTITUTION:A gate electrode 6 is composed of a transparent conductive film. After source and drain electrodes 3, 2 are formed on an insulating substrate 1, a semiconductor layer 4, a gate insulating film 5, a transparent conductive film 8 are sequentially formed on a whole surface, the whole surface is further coated with a negative type resist 9, a light L is irradiated from the rear side surface of the substrate 1, and cleaned, and resist 9 of parts A corresponding to the electrodes 3, 2 is removed. Then, the film 8 of the parts corresponding to the electrodes 3, 2 is selectively removed to form the electrode 6 corresponding to a channel interposed between the electrodes 3 and 2, thereby manufacturing a thin film transistor. A doping layer 4a is formed, for example, on a boundary between the layer 4 and the electrodes 3, 2. |
