| 摘要 |
PURPOSE:To be able to preferably form transistors which use the sides of grooves without implanting a high concentration n-type impurity to the sides of the grooves by ion implanting the bottoms of the grooves after forming the grooves to form an n-type high concentration impurity layer. CONSTITUTION:An n-type impurity layer 12 is buried in advance in a region for forming an impurity layer on the bottom of the groove, and then epitaxially grown to form a p-type epitaxial layer 13. Further, a trench 16 is opened at a predetermined place, and a gate electrode is formed through a gate oxide film 17 as a word line 18. Thereafter, a capacitor lower electrode is formed by electrically contacting with the layer 12. The electrodes in the bottom of the trench of the transistor can be formed even if ion implanting is not performed after the trench is formed. Thus, a source diffused layer can be formed without deteriorating transistor characteristics using the side faces of the groove. |
