| 摘要 |
PURPOSE:To reduce dispersion of products by a method wherein a second selective gate electrode is formed, on the source side, of the same electrode layer wherein a floating gate electrode is formed, and another selective gate is formed between said two electrodes. CONSTITUTION:An N<+> source region 2 and N<+> drain region 1 are formed on a P-type substrate. Next, an insulating film 5 is formed and, on the insulating film 5, a floating gate electrode 6 is formed surrounded by an insulating film 7. During the stop of etching of the floating electrode 6, a second selective gate electrode 12 is formed, on the source side, of the same electrode layer as the floating electrode 6 is formed of. In an etching region between the second selective gate electrode 12 and floating electrode 6, an interlayer insulating film 7 is formed virtually to bury a selective gate electrode 8. With a channel length LSG being determined by a mask for forming the selective gate electrode 8 and second selective gate electrode 12, no scattering is expected to be in presence attributable to mask displacement. |
