| 摘要 |
PURPOSE:To reduce a smear phenomenon by a method wherein the thicknesses of interlayer insulating films are made thinner on the sides of the end parts of a light-shielding part than in the center of the light-shielding part. CONSTITUTION:The thicknesses of interlayer insulating films 14 and 15 between a light-shielding film 16 and a vertical CCD gate electrode 7 are formed thinner at the sides of the end parts of the light-shielding film than at the center of the light-shielding film 16. If the interlayer insulating films are formed in such a way, a smear phenomenon due to the leakage of light into the interior can be reduced because the leakage port of light becomes narrower. Moreover, by making thinner parts only of the interlayer insulating films, the increase in the parasitic capacitance between the CCD gate electrode 7 and the light- shielding film 16 and the deterioration of interlayer withstand voltage can be inhibited. |
