| 摘要 |
PURPOSE:To enable the integration and coexistence of an IIL operating at high speed, an N-P-N Tr and a P-N-P Tr by constituting an emitter region in the vertical type P-N-P Tr by a region shallower than a base region. CONSTITUTION:A semiconductor integrated circuit consists of a P-type substrate 21, and N-type layer 22, N<+> type buried layers 23a-23c, P<+> type isolation regions 24, island regions 25a-25c, a P-type buried base region 26, an N<+> type collector region 27, P<+> type base leading-out regions 28, a P<+> type injections region 29, an N<+> type contact region 30, a P-type base region 31, an N<+> type emitter region 32, an N<+> type contact region 33, a P<+> type collector buried layer 34, P<+> type collector leading-out regions 35, an N<+> base contact region 37, a P-type emitter region 38, an oxide film 39, and electrodes 40. An IIL shaping a buried base region in a reverse N-P-N Tr is unified, made to coexist and formed in the island region 25a, a normal N-P-N Tr in the island region 25b and a vertical type P-N-P Tr shaped from the considerably shallow emitter region 38 in the island region 25c. |
