发明名称 PATTERN FORMATION
摘要 PURPOSE:To extend the effective focal length in the projecting exposure process by a method wherein focussing surfaces are set up at multiple positions relatively different from a resist layer on an optical axis to be exposed simultaneously or stepwise or exposed while continuously changing the resist layer on the optical axis. CONSTITUTION:A substrate 1 is coated with photoresist to form a photoresist layer 2 and thin a pattern is exposed thereon using a projecting exposure device to be developed later. At this time, after firstly exposing the pattern at the position of focussing point of light 6 (the first focussing point), a stage fixed to the substrate 1 is shifted in the optical axis direction to expose the pattern for the second time at the position 4 specifically different from the first focussing point 3 in the optical axis direction as another focussing point (the second focussing point). Through these procedures, the focal length can be extended so that a fine pattern may be formed with high precision regardless of any step difference on the surface.
申请公布号 JPS6342122(A) 申请公布日期 1988.02.23
申请号 JP19860185087 申请日期 1986.08.08
申请人 HITACHI LTD 发明人 FUKUDA HIROSHI;HASEGAWA NOBUO;TANAKA TOSHIHIKO
分类号 H01L21/30;G03F7/20;G03F7/26;H01L21/027 主分类号 H01L21/30
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