| 发明名称 |
Method of producing high Tc superconducting NbN films |
| 摘要 |
Thin films of niobium nitride with high superconducting temperature (Tc) of 15.7 DEG K. are deposited on substrates held at room temperature ( DIFFERENCE 90 DEG C.) by heat sink throughout the sputtering process. Films deposited at PAr>12.9+/-0.2 mTorr exhibit higher Tc with increasing PN2,I, with the highest Tc achieved at PN2,I=3.7+/-0.2 mTorr and total sputtering pressure Ptot=16.6+/-0.4. Further increase of N2 injection starts decreasing Tc.
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| 申请公布号 |
US4726890(A) |
申请公布日期 |
1988.02.23 |
| 申请号 |
US19850764812 |
申请日期 |
1985.08.12 |
| 申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE ADMINISTRATOR OF THE NATIONAL AERONAUTICS AND SPACE ADMINISTRATION |
发明人 |
THAKOOR, SARITA;LAMB, JAMES L.;THAKOOR, ANILKUMAR P.;KHANNA, SATISH K. |
| 分类号 |
C23C14/06;(IPC1-7):C23C14/34 |
主分类号 |
C23C14/06 |
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