Negative photoresist on the basis of polyphenols and epoxide compounds or vinyl ethers.

摘要

The negative photoresist consists essentially of
      a) at least one solid, film-forming polyphenol,
      b) at least one compound which contains at least two epoxide groups or at least two vinyl ether groups or at least one epoxide and vinyl ether group in the molecule,
      c) at least one cationic photoinitiator for the component b), and
      d) optionally, standard additives.
The resist can be developed in aqueous alkali.