| 摘要 |
A nonvolatile random access memory comprising a memory cell including a first MOS transistor having a drain connected to a bit line and a gate connected to a word line, a memory transistor having a drain connected to a source of the first MOS transistor, a control gate connected to a first control signal line and a floating gate for storing charges, and a second MOS transistor connected between a source of the memory transistor and a ground potential and connected to a second control signal line. The memory cell operates as a random access memory cell when the first control signal line is an "H" level and the second MOS transistor is turned off in response to and "L" level on the second control signal line, and operates as an EEPROM when the first control signal line is an "L" level and/or a "Vp" level.
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