| 摘要 |
PURPOSE:To prevent interference between transfer pattern due to a pattern defective, etc., by making the magnetic-bubble erasing magnetic field of a magnetic field, positioned between the transfer patterns laminated on a substrate with aninsulating layer between, smaller than that at any other part. CONSTITUTION:On a substrate 11, a magnetic field 12, insulating layers 13, 15 and 17, a conductor layer 14 among them, magnetic-bubble transfer pattern 16, etc., are formed to constitute a bubble memory element. Then, in the area 12a of the magnetic film 12 between transfer patterns 16, a magnetic-bubble erasing magnetic field is made smaller than that in any other area of the magnetic film 12 by increasing the amount of irradiation with an ion beam or by reducing the thickness. Consequently, no magnetic bubble is present in the area 12a, so that while interference between the transfer patterns 16 due to a magnetism defective and a pattern detective, the malfunction of a magnetic bubble memory is eliminated. |
