发明名称 |
Graphene plasmonic communication link |
摘要 |
A signal transfer link includes a first plasmonic coupler, and a second plasmonic coupler spaced apart from the first plasmonic coupler to form a gap. An insulator layer is formed over end portions of the first and second plasmonic couplers and in and over the gap. A plasmonic conductive layer is formed over the gap on the insulator layer to excite plasmons to provide signal transmission between the first and second plasmonic couplers. |
申请公布号 |
US9417387(B2) |
申请公布日期 |
2016.08.16 |
申请号 |
US201514953588 |
申请日期 |
2015.11.30 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Avouris Phaedon;Perebeinos Vasili;Steiner Mathias B.;Valdes Garcia Alberto |
分类号 |
G02B6/26;G02B6/42;G02B6/122;G02B6/12;H04B10/90 |
主分类号 |
G02B6/26 |
代理机构 |
Tutunjian & Bitetto, P.C. |
代理人 |
Tutunjian & Bitetto, P.C. ;Alexanian Vazken |
主权项 |
1. A method for high frequency signal transfer, comprising:
providing a plasmonic signal transfer link including a first plasmonic coupler, a second plasmonic coupler spaced apart from the first plasmonic coupler to form a gap, an insulator layer formed over end portions of the first and second plasmonic couplers and in and over the gap, and a plasmonic conductive layer formed over the gap on the insulator layer to excite plasmons to provide signal transmission between the first and second plasmonic couplers; signaling between a first component coupled to the first plasmonic coupler and a second component coupled to the second plasmonic coupler; and modulating the signal transmission in the signal transfer link with a gate field provided by at least two gate structures present over the plasmonic conductive layer, wherein a gate area of a first one of the at least two gate structures is different from a gate area of at least a second one of the at least two gate structures, wherein a difference in the gate areas in said at least two gate structures produces a multi-level phase modulation. |
地址 |
Armonk NY US |