METAL-DIELECTRIC LAYER-SEMICONDUCTOR STRUCTURE OF SOURCE-AND-DRAIN CONTACT FOR THREE-DIMENSIONAL SINGLE INTEGRATED LOW TEMPERATURE PROCESS TECHNOLOGY AND METHOD FOR MANUFACTURING SAME

摘要

The present invention relates to a semiconductor device in which a source or a drain is formed, and may provide a semiconductor device which includes a semiconductor layer, a metal layer which forms a source or a drain of the semiconductor device, and a dielectric layer formed between the metal layer and the semiconductor layer. Therefore, the semiconductor device can implement low contact resistance through only a low temperature process.