| 摘要 |
<p>PURPOSE:To disperse danger and to alleviate an electric field thereby to suppress a leakage current of a signal input terminal by providing a conductive layer of floating state between an input protecting resistor and a semiconductor substrate. CONSTITUTION:A resistance layer made of a polycrystalline silicon provided through an insulating film on a semiconductor substrate 8 is used as an input protecting resistor 2. In this case, a conductive layer 5 made of a polycrystalline silicon is insulated from the periphery in a DC manner and provided between the resistor 2 and the substrate 8. When a static voltage is applied in a negative direction to a bonding pad 1 with a ground potential as a reference, a high electric field is alleviated due to the layer 5. Further, the introduced polycrystalline silicon breaks an interlayer insulating film 6 to arrive only at the layer 5, but does not break a field insulating film 7 to the substrate 8 under the layer 5. Thus, a danger can be dispersed and the electric field is alleviated thereby to suppress a leakage current of a signal input terminal.</p> |
