STRAINING METHOD FOR SILICON SUBSTRATE,申请号JP19860169133-传众专利搜索

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发明名称	STRAINING METHOD FOR SILICON SUBSTRATE
摘要
申请公布号	JPS6325933(A)	申请公布日期	1988.02.03
申请号	JP19860169133	申请日期	1986.07.17
申请人	NEC CORP	发明人	ISHITANI AKIHIKO
分类号	H01L21/322	主分类号	H01L21/322
代理机构		代理人
主权项
地址

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