发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To improve the hermetic adhesion property of a low melting point glass with a cap by a method wherein a substance made of an Al layer excellent in adhesion property with the low melting point glass is previously adhered on the plane glass mounting surface of the cap. CONSTITUTION:The element material for cap fabrication with Al, the substance firmly adhering to said glass, adhered over the entire surface is punched by press and drawn, thus forming the cap 4. The center of the cap 4 is so punched that an Al film 2 forms the inner wall. Next, a transparent glass plate 7 is loaded inside the window 5 of the cap 4 via said glass 6. Since the Al film 2 adhered to the cap 4 is adhered by clad, vapor, and plating methods, said film has a high adhesion strength. The glass plate 7 and said glass 6 are both made of glass and therefore have excellent wetting properties, and the adhesion strengths thereof are also large. Thereby, the glass plate 7 and the cap 4 are adhered firmly and hermetically.
申请公布号 JPS59213189(A) 申请公布日期 1984.12.03
申请号 JP19830085739 申请日期 1983.05.18
申请人 HITACHI SEISAKUSHO KK 发明人 ADACHI EIICHI;SASAYAMA ATSUSHI;TSUNENO HIROSHI;ITOU MIKIHIKO
分类号 H01L23/02;H01L33/48;H01S5/00 主分类号 H01L23/02
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