| 摘要 |
PURPOSE:To reduce a resistor occupying area by forming a first conductivity type high concentration region to a second conductivity type resistor layer so as to reach a section in the vicinity of the base from the surface, shaping a high resistance region to the base section and isolating the resistor layer. CONSTITUTION:A P-type resistor layer 3 is formed to an N-type epitaxial layer 2 on a P-type semiconductor substrate 10, and an N<+> type region 8 is shaped so as to reach a section in the vicinity of the base of the P-type resistor layer 3 from the surface of the layer 3. A high resistance region 9 is formed to the base section of the P-type resistor layer 3 by the N<+> type region 8, and the P-type resistor layer 3 is isolated into two resistors 3C, 3D. Consequently, the greater part of currents I flow through RB, thus acquiring resistors having high relative accuracy in which contact resistance RB approximately coincides with a design value. A space between the resistors need not be enlarged, thus reducing a resistor occupying area. |
