| 摘要 |
PURPOSE:To integrally form a photosensitive region and a peripheral circuit in the same semiconductor chip by performing the photoelectric conversion in the photosensitive region by a photoconductor thin film to prevent a latchup phenomenon and photoelectric conversion characteristics from decreasing. CONSTITUTION:When an incident light from an object to be photographed is irradiated through a glass layer 18, color filters 16, a resin 27 and a transparent electrode 15 to a photoconductor thin film 14, currents corresponding to colors of the filters 16 are generated, and supplied through a specific metal electrode film 25 and a conductive terminal 26 to an N<+> type region 20 of a specific MOS transistor. Signals corresponding to picture elements of the region 20 are moved by a scan signal from a horizontal scan shift register 4 through a channel formed under a gate electrode 19 to other N<+> type region 21, and transferred by a signal connecting line 24 to a peripheral circuit 3. Since a photoelectric conversion is performed by the photoconductor film, even if the incident light of strong illuminance is made to irradiate, a large current does not flow to a semiconductor substrate to prevent a latchup phenomenon from occurring. |
