| 摘要 |
PURPOSE:To develop an exposed resist film in a vapor phase by exposing the desired region of the resist film and executing a down flow etching method using a gas contg. oxygen. CONSTITUTION:The resist consisting of the polymer (1,4-polybutadiene 1,4- polybutadiyne or the deriv. thereof, etc.) having double or triple bonds at the main chain as the essential component is coated don the substrate to form the film of the resist. The desired region of such resist film is exposed by UV light, X-rays or electron beam and the such resist film is exposed by UV light, X-rays or electron beam and the substrate having the exposed resist film is subjected to patterning by executing the down flow etching method using the gas contg. the oxygen. The exposed resist film is thereby developed in the vapor phase. |
