| 摘要 |
<p>PURPOSE:To prevent the generation of cracks due to tear stress generated on heating by forming a plurality of internal stress dispersing sections at positions brought into contact onto the circumference of a virtual circle using the surface central point of an element loading section as a reference. CONSTITUTION:A semiconductor device is housed in a heat-resistant thin-type FPP, and has an element loading section 11 for a lead frame and lead sections 12 arranged in a large number to a gull-wing shape in the direction of the periphery 4 of the loading section 11, a semiconductor element 11 is fixed onto the element loading section 11, and the semiconductor element 13 is connected to the internal end sections of the lead sections 12 by metallic small-gage wires 14 such as a gold Au wire. A vent hole 17 with a circular cross section is shaped to a package base at approximately the central section of the element loading section 11. The element loading section 11 is formed to an approximately square in size such as 8X8mm<2> at that time, and arcuate external projecting sections 11a inscribed with a virtual circle 20 having a radius using the surface central point of the square as a reference such as 4.6mm are shaped to three sides of the square. Accordingly, a plurality of the internal stress dispersing sections 11a are formed to the element loading section 11, thus dispersing internal stress generated at the center of the element loading section 11, then precisely preventing the generation of cracks in a package.</p> |
