发明名称 Femto Diode and applications
摘要 A Femto Diode responsive to light frequencies, is described. Quantum principles are utilized. The Femto Diode comprises a submicron metal cylinder with an assymetric metal-insulator-metal tunnel junction at one end and a reflecting potential step at the other end. A light photon having a quanta of energy is absorbed by an electron in the cylinder producing an energetic electron. The cylinder acts as a potential well for the energetic electron, which travels back and forth in its own conduction band without loss of energy until it passes through the junction. The kinetic energy of the energetic electron is converted to electric energy at a greater voltage on the other side of the junction. The energy conversion is reversible. The Femto Diode may be used in light to electric power conversion, a laser which converts electric power to light power, 2D and 3D displays, high speed computers, communications and other devices.
申请公布号 US4720642(A) 申请公布日期 1988.01.19
申请号 US19840637405 申请日期 1984.08.03
申请人 MARKS, ALVIN M. 发明人 MARKS, ALVIN M.
分类号 H01L31/10;H01L31/101;H01L31/18;H01L33/00;(IPC1-7):H01L15/00 主分类号 H01L31/10
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