发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PURPOSE:To obtain constant logical threshold voltage at all times by inserting an Nch type field-effect transistor, in which a gate and a drain are connected, on the + power supply side of a CMOS inverter and a Pch type field-effect transistor, in which a gate and a drain are connected, on the-power supply side. CONSTITUTION:A source in a Pch type field-effect transistor 4 in which a gate and a drain are grounded is connected on the source side of an Nch type field- effect transistor 3, and a source in an Nch type field-effect transistor in which a gate and a drain are connected to a power supply is connected on the source side of a Pch type field-effect transistor 2. The voltage of a point (a) is made lower than the voltage of a + power supply 7 only by the threshold voltage VTN1 of the Nch type field-effect transistor 1 by the transistor 1 at that time. The voltage of a point (b) is made higher than the voltage of a-power supply 8 only by the threshold voltage VTP4 section of the Pch type field-effect transistor 4 by the transistor 4. Accordingly, logical threshold voltage is kept constant.
申请公布号 JPS639961(A) 申请公布日期 1988.01.16
申请号 JP19860154367 申请日期 1986.06.30
申请人 NEC CORP 发明人 SAITO TADASHI
分类号 H01L21/8238;H01L27/092 主分类号 H01L21/8238
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