| 摘要 |
<p>A method for surface treating of thin substrates such as semiconductor wafers, wherein a semiconductor wafer formed with deep and minute trenches on its surface is horizontally placed on a spinner in a chamber with its trenched surface directed up, and then ultraviolet light is emitted to the surface of the wafer to dissolve impurities sticking in the trenches, and thereafter etchant is spouted from a nozzle to the trenched surface of the wafer being spinned about a vertical axis at a high speed, and next the inside of the chamber is rendered at a lower pressure than atmospheric pressure and the atmospheric pressure is recovered after the lapse of a predetermined time, and thus a series of these steps of etchant supplying, pressure reducing, and pressure recovering are carried out until the complete entrance of the etchant into the interior surfaces of the trenches is effected, so as to even or smooth the interior surfaces, and finally the wafer is treated with rinsing, and heating and drying.</p> |
