发明名称 |
Buried stripe-structure semiconductor laser |
摘要 |
A semiconductor laser and a method of producing the same wherein the semiconductor laser is produced by forming a stripe-shaped projection on the surface of a semiconductor substrate, and forming multilayered thin films with a double heterostructure including an active layer on said semiconductor substrate by using the metal organic chemical vapor phase epitaxial growth method or the molecular beam epitaxial growth method. Thus, a buried stripe-structure semiconductor laser can be produced by a sequence of crystal growth processes.
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申请公布号 |
US4719633(A) |
申请公布日期 |
1988.01.12 |
申请号 |
US19850715392 |
申请日期 |
1985.03.25 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
YOSHIKAWA, AKIO;SUGINO, TAKASHI |
分类号 |
H01S5/227;(IPC1-7):H01S3/19 |
主分类号 |
H01S5/227 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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