发明名称 ALIGNMENT IN X-RAY EXPOSURE
摘要 PURPOSE:To correct deviation of a maximum light intensity value due to a limit of fineness of a diffraction grating pattern, by adding an offset value to the maximum value in distribution of peak intensity values of collected light when a gap between a mask and a wafer is registered. CONSTITUTION:Registration between a mask 11 and a wafer 12 is performed manually in a rough manner. Then, one of four alignment marks is irradiated with laser light. A stage S is moved by an X-Y driver 22 while a scanner driver 23 is manipulated so that a peak value of light intensity is obtained and an FZP is registered in the X-or Y-direction with diffraction grating. This general control is performed by a microcomputer while the light intensity is monitored by a photodiode 7. Registration in the Z-direction, namely registration of a gap is performed by a piezoelectric element P controller by a piezocontroller 21. The maximum intensity value is obtained by monitoring the light intensities by means of the photodiode 7 under the control of the microcomputer 20. An offset value which has been previously calculated and inputted to the microcomputer is added to the maximum value thus obtained.
申请公布号 JPS636842(A) 申请公布日期 1988.01.12
申请号 JP19860150743 申请日期 1986.06.26
申请人 FUJITSU LTD 发明人 IIZUKA JUNICHI;SUGISHIMA KENJI;FUEKI SHUNSUKE;MARUYAMA SHIGERU
分类号 G03F9/00;H01L21/027;H01L21/30;H01L21/67;H01L21/68 主分类号 G03F9/00
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