| 摘要 |
PURPOSE:To produce uniform quality devices and reduce external base resistance by forming an emitter region by epitaxial growth in a recess formed in the takeout electrode region of a base region and adjacently to its upper surface. CONSTITUTION:A recess 30 is formed in an external base layer 25 by utilizing a side wall portion 42 of an opening in an SiO2 layer 27 and an emitter region 31 is selectively formed in the recess 30 by epitaxial growth. The emitter region 31 is narrower than a photolithographically determined area by a quantity corresponding to the side wall portion 42 of SiO2. Since a surface having an approximately complete planer structure is obtained, there is no danger of step breaking in wiring. Since the processes of ion implantation and annealing for activation are removed from conventional, a device is favorably uniformed.
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