Electrically alterable, nonvolatile, floating gate type memory device with reduced tunnelling area and fabrication thereof.

摘要

The tunnelling area of a EEPROM memory device of the FLOTOX type is efficiently reduced in respect of the minimum areas obtained by means of current fabrication technologies, by forming the injection zone for the transfer of the electric charges by tunnel effect to and from the floating gate through an original self-aligned process, which allows to limit the dimensions of such a tunnelling area independently from the resolution limits of the available photolithographic technology.