| 摘要 |
PURPOSE:To enhance heat resistance by coating a semiconductor substrate with a naphthoquinonediazide type photosensitive resin, exposing the obtained resin layer to one of light, electron beams, X-rays, and ion beams, developing it, and then, treating it with heated steam in an atmosphere of a basic gas. CONSTITUTION:The naphthoquinonediazide type photoresist layer 2 is formed on the semiconductor substrate 1, exposed to one of light, electron beams, X- rays, and ion beams, and developed to form a pattern on the layer 2. The substrate 1 is placed in an oven substituted by the basic gas of ammonia for the air in the oven, and the desired resist pattern 3 is obtained by treating the layer 2 with heated steam at 1,000 deg.C for 60min. The heat deformation temperature (heat resistance limit) is determined by observing the temperature at which the upper corners of the resist 3 begins to round, thus permitting the pattern superior in heat resistance to be formed. |
