| 发明名称 |
Process for manufacturing a semiconductor device using a mask, and resist material therefor. |
| 摘要 |
<p>In the manufacture of a semiconductor device, the dry etching of a resist layer of an organic material can be utilized without decreasing the yield of the semi-conductor layer, by using a resist layer of an organic material containing heavy metals in an amount of less than 20 ppb for each heavy metal.</p> |
| 申请公布号 |
EP0251447(A2) |
申请公布日期 |
1988.01.07 |
| 申请号 |
EP19870303876 |
申请日期 |
1987.04.30 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
FUJIMURA, SHUZO;YANO, HIROSHI |
| 分类号 |
H01L21/30;G03F7/022;G03F7/26;H01L21/027;H01L21/265;H01L21/28;H01L21/302;H01L21/3065;H01L21/311;H01L21/312 |
主分类号 |
H01L21/30 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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