| 摘要 |
PURPOSE:To obtain a large-sized image sensor having high preformance by forming a photodetection element and a signal processing circuit to a polycrystalline semiconductor layer. CONSTITUTION:Polycrystalline semiconductor layers 12, 15 are shaped onto an insulator substrate 11, and a photodetection element 23 and a signal processing circuit 27 are formed to each semiconductor layer 12, 15. Accordingly, electrical characteristics such as the speed of response are improved, and monolithic integration is enabled. |
