| 摘要 |
PURPOSE:To improve soft error-resistant properties and a data-hold function by crossing one part of each drain region in a pair of MOS transistors for drivers at right angles in the direction along a Vss line, mutually unifying source regions and surrounding the drain regions and the three directions of gate electrodes by the source regions. CONSTITUTION:Since the directions of the arrows A, B, C, D are surrounded by a Vss line 27, a source region 297 and a wiring region in a drain region 292 in another MOS transistor Q1 in a drain region 293 in an MOS transistor Q2 for a driver, minority carriers generated by alpha-rays are interrupted. Since the drain region 292 in Q1 is surrounded by the three directions of the Vss line 27 and a source region 291 and the drain region 292 corresponding to one direction of the source region 291 has an extremely short side X parallel with the Vss line 27 through others are opened, on the other hand, the absorption of minority carriers generated by alpha-rays from the direction of the arrow D is reduced. Accordingly, difference is hardly shaped in the absorptivity of minority carriers in the drain regions 292, 293 in the transistors Q1, Q2 thus improving the performance of memory data-hold. |
