发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To increase the quantity of signal charges stored without deteriorating the degree of integration by forming an intermediate electrode and storing signal charges by using the intermediate electrode. CONSTITUTION:An intermediate electrode is shaped, and signal charges are stored between the intermediate electrode and a lower electrode and between the intermediate electrode and an upper electrode. That is, when a signal is written, an electric signal is transmitted through an N<+> diffusion layer 8, + potential is applied to a second conductive film 6, the N channel transistor is brought to an, 'ON' state, and the signal is transmitted over an N<+> diffusion layer in the lower section of a first conductive film 4 and a third conductive film 15 from an N<+> diffusion layer 7. Consequently, signal charges are each stored in capacitors through thin insulating films 3, 11, 13 between an inversion layer 10 on a substrate and the first conductive film 4, between the third conductive film 15 and the first conductive film 4 and between the third conductive film 15 and a fourth conductive film 12. Accordingly, a signal on reading can be enlarged, and the deterioration of the degree of integration is also prevented.
申请公布号 JPS63148(A) 申请公布日期 1988.01.05
申请号 JP19860143459 申请日期 1986.06.19
申请人 MITSUBISHI ELECTRIC CORP 发明人 NAGATA KAZUSHI
分类号 H01L27/10;G11C11/403;H01L21/8242;H01L27/108 主分类号 H01L27/10
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