| 摘要 |
PURPOSE:To facilitate controlling contact of a resist single-molecular layer film with a substrate with the fine displacement of the resist film by a method wherein the ratio of the ascending displacement of the resist single-molecular layer film to the displacement of the liquid surface of 2nd container corresponds to the ratio between the sectional areas of 1st container and the 2nd container. CONSTITUTION:A wafer 5 is positioned and a resist monomolecular layer film 1 is spread and, in this state, a valve 18 is gradually opened to introduce com pressed nitrogen gas with a pressure of, for instance, 8 kg/cm<2>, into the top space 11a of 2nd container 11 to apply the pressure to a liquid surface 14b. By the pressure, the liquid surface 14b descends and a liquid surface 14a ascends and the resist monomolecular layer film 1 ascends with the liquid surface 14a. The ratio l m between the displacement l of the liquid surface 14a and the displacement m of the liquid surface 14b corresponds to the ratio A2/A1 between the sectional area A2 of the 2nd container 11 and the sectional area A1 of 1st container 10. As A1>A2, l/ m is less than 10. With this constitu tion, the liquid surface 14a ascends very gradually and precisely and the resist monomolecular layer film 1 can be lifted without being damaged.
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