| 摘要 |
PURPOSE:To reduce the warpage of a mask substrate when an X-ray absorber pattern is formed by a method wherein the X-ray absorber pattern is symmetrically formed on both sides of the mask pattern. CONSTITUTION:The first silicon nitride film is deposited on either of the surfaces of an Si single crystal substrate 11, and then a silicon nitride film pattern 12 is formed by performing dry etching. Then, the second silicon nitride film 13 is formed on the other surface of the Si single crystal substrate 11. Subsequently, the mask substrate consisting of the silicon nitride film 13 is formed. Then, the heavy metal film 14 such as W or Ta and the like is deposited on both surfaces of the mask substrate respectively, a desired resist pattern is formed on one of the surfaces of said heavy metal film 14, and the first X-ray absorber pattern 14' is formed by performing a reactive ion etching. Then, a resist pattern 15 is formed by transfer on the surface of the heavy metal film 14 provided on the other surface of the silicon nitride film 13. Subsequently, the second X-ray absorber 14'' is formed by patterning the lower layer of the heavy metal film 14. |
