发明名称 RESIST PATTERN FORMATION
摘要 <p>The patterned image includes on a substrate, a patterned image of a first resist material and patterned image of a second and different resist material on said first resist material. Said first material contains reactive hydrogen functional groups. The surface layer of the delineated and uncovered first resist material is reacted with a multifunctional organometallic material containing functional groups that are reactive with the functional groups of said first material. The method comprises: providing a first resist material on a substrate wherein said first material contains reactive hydrogen functional groups; providing a second and different resist material on top of said first resist material; selectively exposing said second resist material and developing said second and different resist material to form a resist mask; exposing said first resist material through the said resist mask and developing said first resist material; and reacting the surface layer of the exposed and uncovered first resist material with said organometallic material.</p>
申请公布号 JPS62297837(A) 申请公布日期 1987.12.25
申请号 JP19870093427 申请日期 1987.04.17
申请人 INTERNATL BUSINESS MACH CORP <IBM> 发明人 BAAN JIENGU RIN;BII JIEEN RIN YANGU;JIYAA MIN YANGU
分类号 G03F1/00;G03F1/08;G03F7/11;G03F7/26;G03F7/38;G03F7/40;H01L21/027;H01L21/30 主分类号 G03F1/00
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