| 摘要 |
PURPOSE:To prevent formation of alloy between a semiconductor film and an electrode and to improve heat resistance of the electrode, by sequentially providing a metal silicide film and a transition-metal nitride film having conductivity on a semiconductor film. CONSTITUTION:At a p-type semiconductor substrate 1, an embedded layer 2, an n<-> Si epitaxial layer 3, a field insulating film 9, a channel stopper region 10 and a p<+> type polycrystalline Si film 11, in which boron is diffused, are formed. Thereafter, the surface of the film 11 undergoes thermal oxidation, and an insulating film 12 is formed. Then, an electrode lead-out region 7, a p-type base region 4 and an n<+> type emitter region 5 are formed. The specified part of the insulating film 12 is removed, and a contact hole 12a is formed. After a metal film is formed on the entire surface, sintering is performed, and the metal film, which is not reacted, is removed. A metal silicide film 13 is formed in the hole 12a. Then, a transition-metal nitride film 14 and an Al-Si alloy film are formed on the entire surface. Then patterning is performed, and electrodes 6, 8 and 15 are formed. |
