| 摘要 |
PURPOSE:To measure the surface voltage of a local part of IC with high precision by a method wherein a voltage corresponding to the maximum point of curvature of a detected, collected current intensity versus decelerated field voltage curve obtained by measuring the secondary electrons discharged from an irradiated part of IC using a decelerated field type spectroscope is detected. CONSTITUTION:A specimen 6 such as IC, etc., is irradiated with primary electron beams using an electron gun 1 to collect and detect secondary electrons discharged from the irradiating points by a detector 3 through a grid-type decelerated field electrode of a decelerated field type spectroscope 2 impressed with decelerated voltage generated by a decelerated voltage generating power supply 4. A voltage at a local part can be measured by a difference between the decelerated field electrode voltage V corresponding to the peak of a differential S- shaped curve A attained by collecting the secondary electrons discharged from the local part and the similar peak voltage Vp at a part kept in a reference voltage. Through these procedures, the surface voltage at a local part of IC can be measured with high precision.
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