| 摘要 |
PURPOSE:To enable an accurate etching termination to be detected by a method wherein light emission from etched species is detected during an etching process to detect the termination of etching process in terms of the fluctuation in intensity of light emission. CONSTITUTION:A light emission from etched species is detected during an etching process to detect the termination of etching process by means of monitoring the fluctuation in intensity of light emission. A light emission from SiF due to reaction of fluoride and an insulating layer is detected by exposing the insulating layer to a plasma discharge using a fluoride base gas. Through these procedures, the difference in SiF light emission intensity as one kind of SiF can be detected for detection of light emitting wavelength so that the dependency upon pattern during etching process and the fluctuation in step difference film thickness may he controlled with reproducibility.
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