| 摘要 |
PURPOSE:To form a photodiode, in which an afterimage phenomenon is hardly generated, by shaping an insulating film containing ions in a partial region in the main surface of a semiconductor substrate and using the partial region as the photodiode. CONSTITUTION:Ions having fixed positive charges are introduced into the film of an silicon dioxide film 5, thus forming a photodiode. A depletion layer is shaped without requiring the application of voltage from the outside in the vicinity of the surface of a P-type silicon substrate 1, and electrons in electron- hole pairs generated by light projected from the surface of the photodiode are stored in the depletion layer and employed as signal charges. When signal charges are read to a transfer channel 4, complete transfer can be realized easily by sufficiently increasing voltage applied to a transfer gate 6 because electrons as signal charges are stored as minority carriers. Accordingly, an afterimage phenomenon is removed completely. |
