| 摘要 |
PURPOSE:To reduce junction capacity according to insulating isolation and fine formation, to obtain a high speed bipolar IC, a high speed LSI, and to contrive to reduce consuming electric power by a method wherein the bipolar transistor and a resistor are integrated in one body. CONSTITUTION:After an Si3N4 film 6 is formed as an oxidation checking film on an Si substrate 1, a CVD-SiO2 film 7 is formed as an insulating film. After then, the CVD-SiO2 film 7 and the Si3N4 film 6 in the graft base region 8 and the resistance region 9 of a transistor are etched to be removed. Then a poly-Si film 10 is formed on the whole surface as a first semiconductor film. Then boron ions 11A, 11B are implanted. The poly-Si film 10 on the CVD-SiO2 film 7 is etched to be removed, and a resist film 12 is removed. The CVD-SiO2 film 7 in an emitter region and a collector region is etched to be removed. After then, when an SiO2 film 13 is formed, a graft base diffusion layer 14 is formed at the same time. A poly-Si film 15, a P-type diffusion layer 16, an N<+> type diffusion layer 18 and an SiO2 film 19 are formed, a base contact window 20 and contact 21 of a resistor are formed, and Al wiring 22 is performed.
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