摘要 |
PURPOSE:To facilitate positioning by a method wherein a V-shaped groove--type wiring pad is formed on the surface of a substrate and an external wiring having a protruded bump and this pad are connected to each other. CONSTITUTION:A field insulating film 4, an Al wiring 5 and a pad 10 consisting of metal and so on for diffusion barrier are laminated on the V-shaped groove of an Si substrate 1 and a V-shaped wiring pad is formed. On the other side, a wiring is provided with a metal thin film 12 on a ceramic substrate 13 which is used as the parent body of an external wiring and a protruded solder bump 11 is formed on the thin film wiring 12 at the connecting point with the semiconductor V-shaped pad part. By performing solder reflow and so on, the solder bump 11 on the external wiring 12 is connected with the V-shaped pad part 10 of a semiconductor integrated circuit.
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