| 摘要 |
PURPOSE:To enable encapsulation to open with facility and within a short period of time by a method wherein a solution of fuming nitric acid with some concentrated sulfuric acid added thereto is used to melt the encapsulating resin that contains a GaAs compound semiconductor device. CONSTITUTION:Not less than 30% in volume of concentrated sulfuric acid is added to fuming nitric acid and the combination is used to open a resin capsule at a temperature not higher than 100 deg.C. In this way, a GaAs substrate is protected from etching, chip-integrating adhesive agent is prevented from decomposition, and the resin capsule may be opened in a short period of time and yet with facility. A mixing ratio of not lower than 0.3 results in a decrease in product quality dispersion because under the condition the rate of etching for the GaAs is not more than 1/20 of that of the encapsulating resin.
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