| 摘要 |
PURPOSE:To reduce the rate of crystallization of amorphous Si and to improve a conversion efficiency of a solar cell, by specifying the film thickness of a metal electrode when a plurality of solar cells are formed separately on the same substrate by a laser processing. CONSTITUTION:A second electrode 4 is formed by an electron beam evaporation method or a sputtering evaporation method. For the composition thereof, materials such as Al, Ti, Ni and Cr can be used. Although these metals are different in a melting temperature and heat conductivity from one another, the film thickness thereof is so set as to be able to secure the electric conductivity as an electrode. The film thickness is 1000 Angstrom appropriately. If the film thickness of the second electrode is larger than about 1000 Angstrom , a region exceeds 100 microns, a leak current of a device increases due to this crystallization, and so a conversion efficiency decreases. Accordingly, the film thickness of the second electrode needs to be about 1000 Angstrom also so that the region of crystallization of amorphous silicon may not be more than 100 microns as possible. An ohmic contact and continuity between the second electrode thus formed and amorphous Si can be secured. |
