| 摘要 |
The invention relates to a device for doping a semiconductor body, in particular a III/V semiconductor. The semiconductor body is contained in a dismountable doping chamber, which also contains the dopant material, for example Zn or Cd and which comprises an upper and a lower part. These parts can be heated directly electrically, resulting in short heating and cooling times and, consequently, making a precise control of the diffusion process possible. |
